Projection Photolithography
As features continue to decrease in size, small defects may no longer be acceptable or produce the yields required to remain competitive. In contact printing, the risk of contaminating or damaging the mask and substrate is substantial, ultimately affecting yield and production costs. In projection lithography, the mask and substrate are separated by a significant distance, which protects the mask and substrate from contamination during the exposure process. Projection is ideal for photolithographic steps down to 3 microns resolution. The unique optical and mechanical design also provides a large depth of focus which accommodate thick photosensitive materials. Tamaracks projection systems offer significant process, yield, and flexibility advantages as well as high throughput and performance to meet the most stringent specifications.
Large area scanning for large area substrates. Provides excellent exposure uniformity over the entire exposure area.
Combines the high yield benefits of projection lithography with the ability to provide local alignment accuracy.
