- Provides non-contact imaging, eliminating defects due to mask contact and contamination, resulting in higher yields.
- Pellicles can be used to further protect the masks from damage.
- Resist sidewall angle is controlled by a combination of varying the numerical aperture and focal position at the resist surface.
- Broadband illumination source and projection lens - Includes selectable filters to allow matching of wavelength to the specific resist characteristics.
- Accurate through the lens alignment is provided by the versatile "Patmax®" pattern recognition system manufactured by Cognex® and by Tamfinder, a proven set of proprietary search and best-fit algorithms. An optional off-axis system is available for dark field mask applications.
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- Large depth of focus for precise image control - A catadioptric lens with variable N.A. makes for a flexible exposure tool for accurate imaging in thin or ultra-thick (100 microns and over) resist.
- High irradiance from a single UV arc lamp adds to the capability of accurately and economically imaging a variety of thick photoresists while maintaining high throughput.
- Continuous scanning for high throughput - One full field mask contains the entire wafer layout, including the edge ring required for plate-up processes. The entire exposure takes place in one continuous step, surpassing the throughput performance of a stepper, resulting in reduced processing cost per chip, and therefore lower cost of ownership.
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