Tamarack's scanning projection technique for large area lithography has fundamental advantages over other exposure methods.
Compared to conventional contact, proximity, and projection exposure systems, this method avoids problems of mask damage, mask and substrate contamination, and maintaining gap, distortion and exposure uniformity over large areas. There is also no need to match adjacent patterns, thus eliminating stitching errors.
It is ideal for photolithographic steps down to 4 micron resolution. Fully compatible with large area steppers, it provides mix-and-match capabilities with substantially lower overall equipment cost.
